Our company is an earlier graphene production enterprise in China, and its products have been sold well at home and abroad. The company can provide single-layer and few-layer (less than 10 layers) graphene films on different substrates, with high integrity, high single-layer coverage, good electrical conductivity, and a maximum mobility of ~6000cm2/vs. At present, common substrates include copper substrates, silicon substrates, silicon oxide wafer substrates, PET substrates, sapphire substrates, nickel foam, self-service transfer, bubble pick-up, quartz substrates, and so on.

So, how is the copper-based graphene transferred to the silicon oxide wafer? Let's learn more about it below!

(1) Take out the copper foil, cut it, and take a sample;

(2) After spin-coating a layer of PMMA on the surface of the sample, it is fully dried at room temperature;

(3) Cut the copper foil that has been spin-coated with PMMA, take the middle part, and place it in the etching solution for etching;

(4) During the etching process, the back of the copper foil should be rinsed with deionized water several times;

(5) After the copper foil is completely etched, use a glass sheet to transfer the graphene film into water and clean it;

(6) After cleaning, transfer the graphene film to the silicon oxide wafer and dry;

(7) After the sample is cooled to room temperature, place it in an acetone solution to remove PMMA;

(8) Take out the sample, rinse the surface of the film with ethanol and deionized water, and dry it in the air.

Can graphene on silicon oxide be re-released into deionized water?

After graphene is transferred to any substrate (excluding suspended self-transfer substrates), it can be released again before drying, but after sufficient drying, the graphene and the substrate are fully bonded and cannot be released anymore.